0133088 - FZU-D 20000451 RIV NL eng J - Článek v odborném periodiku
Oswald, Jiří - Hulicius, Eduard - Pangrác, Jiří - Melichar, Karel - Šimeček, Tomislav - Petříček, Otto - Vančura, Milan - Hradil, J.
InAs/GaAs lasers with very thin active layer.
Thin Solid Films. Roč. 380, - (2000), s. 233-236. ISSN 0040-6090. E-ISSN 1879-2731
Grant CEP: GA AV ČR IAA1010807; GA ČR GA102/99/0414
Výzkumný záměr: CEZ:AV0Z1010914
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.160, rok: 2000

InAs/GaAs laser structures based on atomically thin InAs strained quantum wells were prepared by metal-organic vapour phase epitaxy. The dependence of electroluminescence spectra on the thickness, as well as on the number of InAs quantum wells, was studied.

Trvalý link: http://hdl.handle.net/11104/0031076