Počet záznamů: 1
Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy
- 1.KINDL, D., TOUŠKOVÁ, J., HULICIUS, E., PANGRÁC, J., ŠIMEČEK, T., JURKA, V., HUBÍK, P., MAREŠ, J. J., KRIŠTOFIK, J. Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy. Journal of Applied Physics. 2004, 95(4), 1811-1815. ISSN 0021-8979. E-ISSN 1089-7550.
Počet záznamů: 1