0556260 - FZÚ 2023 RIV GB eng J - Článek v odborném periodiku
Stránská Matějová, J. - Hospodková, Alice - Košutová, T. - Hubáček, Tomáš - Hývl, Matěj - Holý, V.
V-pits formation in InGaN/GaN: influence of threading dislocations and indium content.
Journal of Physics D-Applied Physics. Roč. 55, č. 25 (2022), č. článku 255101. ISSN 0022-3727. E-ISSN 1361-6463
Grant CEP: GA MŠMT(CZ) LTAIN19163; GA MŠMT EF16_026/0008382
Grant ostatní: OP VVV - CARAT CZ.02.1.01/0.0/0.0/16_026/0008382
Výzkumná infrastruktura: CzechNanoLab - 90110
Institucionální podpora: RVO:68378271
Klíčová slova: V-pits * InGaN/GaN * dislocations * x-ray diffraction * diffuse scattering * XRD * RSM
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 3.4, rok: 2022 ; AIS: 0.675, rok: 2022
Způsob publikování: Open access s časovým embargem
Web výsledku:
https://doi.org/10.1088/1361-6463/ac5c1aDOI: https://doi.org/10.1088/1361-6463/ac5c1a

Two sets of InGaN/GaN MOVPE-grown samples were studied by high-resolution x-ray diffraction techniques together with statistical analysis of atomic force microscope images in order to determine the impact of In concentration and threading dislocations (TDs) density on the V-pit formation. It was shown that in our samples, the density of V-pits in the epilayer matched the TD density with a screw component in the substrate. Pure edge TDs do not affect the V-pit density. The In concentration influences the size of the V-pits, but not their density.
Trvalý link: http://hdl.handle.net/11104/0330551