Počet záznamů: 1
Integration of nanometer-thick 1T-TaS.sub.2./sub. films with silicon for an optically driven wide-band terahertz modulator
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SYSNO ASEP 0539196 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Integration of nanometer-thick 1T-TaS2 films with silicon for an optically driven wide-band terahertz modulator Tvůrce(i) Jakhar, A. (IN)
Kumar, Prabhat (FZU-D) ORCID
Husain, S. (SE)
Dhyani, V. (IN)
Das, S. (IN)Celkový počet autorů 5 Zdroj.dok. ACS Applied Nano Materials. - : American Chemical Society - ISSN 2574-0970
Roč. 3, č. 11 (2020), s. 10767-10777Poč.str. 10 s. Jazyk dok. eng - angličtina Země vyd. US - Spojené státy americké Klíč. slova terahertz ; modulator ; conductivity ; modulation depth ; transmittance Vědní obor RIV BM - Fyzika pevných látek a magnetismus Obor OECD Condensed matter physics (including formerly solid state physics, supercond.) Způsob publikování Omezený přístup Institucionální podpora FZU-D - RVO:68378271 UT WOS 000595546500024 EID SCOPUS 85096133075 DOI 10.1021/acsanm.0c02076 Anotace The amplitude of terahertz (THz) waves is modulated optically by a pumping laser source, and the effect of optical power on modulation depth is systematically investigated in this work. The reported THz modulator is based on a conducting transition metal dichalcogenide (TMD), that is, a nanometer-thick thin film of tantalum disulfide (TaS2) grown on a high-resistivity silicon (Si) substrate. The Raman spectrum confirms the formation of the 1T phase of TaS2. Modulation depths of 69.3 and 46.8% have been achieved at 0.1 THz and 0.9 THz frequency, respectively, under a low pumping power of 1 W/cm2. A constant higher modulation depth in the wide frequency range reveals the broadband response of the THz modulator. Under the same conditions, the modulation increased twice as compared to bare Si after annealing at 300 °C in the presence of air. Furthermore, numerical analysis based on the finite-difference time domain shows that a greater number of photogenerated charge carriers are present near the interface of Si and TaS2, which leads to enhancement in modulation. The utilization of 1T-TaS2 imparts potential to these TMDs in the wide THz frequency range and unfolds the possibilities for their use in THz imaging, wireless communication, and detection processes.
Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2021 Elektronická adresa https://doi.org/10.1021/acsanm.0c02076
Počet záznamů: 1