Study of thermal recrystallisation in Si implanted by 0.4-MeV heavy ions

0508842 - ÚJF 2020 RIV US eng J - Článek v odborném periodiku
Mikšová, Romana - Horák, Pavel - Holý, V. - Macková, Anna
Study of thermal recrystallisation in Si implanted by 0.4-MeV heavy ions.
Surface and Interface Analysis. Roč. 51, č. 11 (2019), s. 1113-1120. ISSN 0142-2421. E-ISSN 1096-9918
Grant CEP: GA ČR GA18-03346S; GA MŠMT EF16_013/0001812; GA MŠMT LM2015056
Institucionální podpora: RVO:61389005
Klíčová slova: ion implantation of Si * ion channelling in a crystal material * heavy ions implantation * structural modification of an ion-implanted silicon crystal
Obor OECD: Nuclear physics
Impakt faktor: 1.665, rok: 2019
Způsob publikování: Omezený přístup
https://doi.org/10.1002/sia.6698

A Si crystal layer on SiO2/Si was implanted using 0.4-MeV Kr+, Ag+, and Au+ at ion fluences of 0.5 x 10(15) to 5.0 x 10(15) cm(-2). Subsequent annealing was performed at temperatures of 450 degrees and 800 degrees for 1 hour. The structural modification in a Si crystal influences ion beam channelling phenomena. Therefore, implanted and annealed samples were investigated by Rutherford backscattering spectrometry under channelling (RBS-C) conditions using an incident beam of 2-MeV He+ from a 3-MV Tandetron in random or in aligned directions. The depth profiles of the implanted atoms and the dislocated Si atom depth profiles in the Si layer were extracted directly from the RBS measurement. The damage accumulation and changes in the crystallographic structure before and after annealing were studied by X-ray diffraction (XRD) analysis. Lattice parameters in modified silicon layers determined by XRD were discussed in connection to RBS-C findings showing the crystalline structure modification depending on ion implantation and annealing parameters.
Trvalý link: http://hdl.handle.net/11104/0300721