Modeling of thermal stress induced during the diamond-coating ofAlGaNGaN high electron mobility transistors

Počet záznamů: 1

1.

SYSNO	0391172
Název	Modeling of thermal stress induced during the diamond-coating ofAlGaNGaN high electron mobility transistors
Tvůrce(i)	Jirásek, Vít (FZU-D)_RID Ižák, Tibor (FZU-D)_RID Babchenko, Oleg (FZU-D)_{RID, ORCID} Kromka, Alexander (FZU-D)_{RID, ORCID, SAI} Vanko, G. (SK)
Zdroj.dok.	Development of Materials Science in Research and Education, Book of Abstracts of the 22nd Joint Seminar. S. 32-32. - Praha : Czechoslovak Association for Crystal Growth (CSACG), 2012 / Kožíšek Z. ; Nitsch K.
Konference	Joint Seminar – Development of materials science in research and education /22./, Lednice, 03.09.2012-07.09.2012
Druh dok.	Abstrakt
Grant	GBP108/12/G108 GA ČR - Grantová agentura ČR, CZ - Česká republika
CEZ	AV0Z10100521 - FZU-D (2005-2011)
Jazyk dok.	eng
Země vyd.	CZ
Klíč.slova	modeling * thermal stress * diamond
Trvalý link	http://hdl.handle.net/11104/0220048

Počet záznamů: 1