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Modeling of thermal stress induced during the diamond-coating ofAlGaNGaN high electron mobility transistors
- 1.Jirásek, V., Ižák, T., Babchenko, O., Kromka, A., Vanko, G. Modeling of thermal stress induced during the diamond-coating ofAlGaNGaN high electron mobility transistors. In: KOŽÍŠEK, Z., NITSCH, K., eds. Development of Materials Science in Research and Education, Book of Abstracts of the 22nd Joint Seminar. Praha: Czechoslovak Association for Crystal Growth (CSACG), 2012, s. 32-32. ISBN 978-80-260-2357-9.
Počet záznamů: 1