Electrical and optical characteristics of boron doped nanocrystalline diamond films

0502242 - FZÚ 2019 CZ eng A - Abstrakt
Stuchlíková, The-Ha - Remeš, Zdeněk - Mortet, Vincent - Taylor, Andrew - Stuchlík, Jiří - Volodin, V.A.
Electrical and optical characteristics of boron doped nanocrystalline diamond films.
17th Joint Vacuum Conference - Book of abstracts. Praha: Czech Vacuum Society, 2018 - (Mašek, K.; Jungwirthová, I.; Drbohlav, J.). s. 145-145
[Joint Vacuum Conference /17./. 10.09.2018-14.09.2018, Olomouc]
Grant CEP: GA MŠMT(CZ) LTC17029; GA ČR GA17-05259S; GA AV ČR(CZ) Fellowship J. E. Purkyně
Grant ostatní: AV ČR(CZ) Fellowship J. E. Purkyně
Program: Fellowship J. E. Purkyně
Institucionální podpora: RVO:68378271
Klíčová slova: nanocrystalline diamond * boron doping * Raman spectroscopy
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

The boron doped nanocrystalline diamond films have good conductivity there are semitransparent and they can be used as conductive and transparent electrodes for electronic and optoelectronic applications. On boron doped nanocrystalline diamond films with increasing of boron concentration grown on quartz substrates by the method of plasma-chemical deposition were measured temperature dependence of electrical conductivity, optical reflection, transmission and absorption and as well as the thin films where investigated using Raman spectroscopy. For analysis of Raman spectra of heavily doped p-type nanocrystalline diamond using Fano contour one should take into account the shift and broadening of phonon line due to phonon confinement in grains. Analysis of the spectra showed both the phonon confinement effect in nanocrystalline grains and Fano interference effect due to the contribution of electron Raman measured scattering in heavily doped p-type diamond films.

Trvalý link: http://hdl.handle.net/11104/0294188