Raman scattering in boron doped nanocrystalline diamond films: Manifestation of Fano interference and phonon confinement effect

0496460 - FZÚ 2019 RIV GB eng J - Článek v odborném periodiku
Volodin, V.A. - Mortet, Vincent - Taylor, Andrew - Remeš, Zdeněk - Stuchlíková, The-Ha - Stuchlík, Jiří
Raman scattering in boron doped nanocrystalline diamond films: Manifestation of Fano interference and phonon confinement effect.
Solid State Communications. Roč. 276, Aug (2018), s. 33-36. ISSN 0038-1098. E-ISSN 1879-2766
Grant CEP: GA ČR GA17-05259S; GA AV ČR(CZ) Fellowship J. E. Purkyně; GA MŠMT(CZ) LTC17029
Grant ostatní: AV ČR(CZ) Fellowship J. E. Purkyně
Program: Fellowship J. E. Purkyně
Institucionální podpora: RVO:68378271
Klíčová slova: Raman scattering * Diamond * Fano interference
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 1.433, rok: 2018

Heavily boron doped nanocrystalline diamond films grown on glass substrates by the method of plasma-chemical deposition, were investigated using Raman spectroscopy. Analysis of the spectra showed both the phonon confinement effect in nanocrystalline grains and Fano interference effect due to the contribution of electron Raman scattering in heavily doped p-type diamond films. The increase of boron concentration led to decrease of the size of crystalline diamond grains. The films are semitransparent and have good conductivity, so that it can be used as transparent electrodes in giant-scale electronics and optoelectronics.
Trvalý link: http://hdl.handle.net/11104/0289331