Interface engineering for improved growth of GaSb on Si(111)

0370546 - FZÚ 2012 RIV NL eng J - Článek v odborném periodiku
Proessdorf, A. - Grosse, F. - Romanyuk, Olexandr - Braun, W. - Jenichen, B. - Trampert, A. - Riechert, H.
Interface engineering for improved growth of GaSb on Si(111).
Journal of Crystal Growth. Roč. 213, č. 1 (2011), 401-404. ISSN 0022-0248. E-ISSN 1873-5002
Grant ostatní: AV CR - DFG(DE) Common Project AV CR - DFG
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: defects * RHEED * XRD * MBE * antimonides * III-V semiconductors
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 1.726, rok: 2011

Molecular beam epitaxy growth of GaSb growth on Si(111) substrates can be improved by pre-depositing Sb at high temperature. The (3x3) reconstruction obtained by this procedure results in closed heteroepitaxial GaSb layers in contrast to the direct growth on Si(111)(7x7) which produces islands. The growth is characterized by atomic force microscopy, electron and x-ray diffraction. On the basis of these investigations, the formation of an interface misfit dislocation network is discussed.
Trvalý link: http://hdl.handle.net/11104/0204326