Počet záznamů: 1
Deposition of oxide nanostructures by nanosecond laser ablation of silicon in an oxygen-containing background gas
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SYSNO ASEP 0561204 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Deposition of oxide nanostructures by nanosecond laser ablation of silicon in an oxygen-containing background gas Tvůrce(i) Rodionov, A.A. (RU)
Starinskiy, S.V. (RU)
Shukhov, Y.G. (RU)
Bulgakov, Alexander (FZU-D) ORCIDCelkový počet autorů 4 Zdroj.dok. Thermophysics and Aeromechanics - ISSN 0869-8643
Roč. 28, č. 4 (2021), s. 549-554Poč.str. 6 s. Jazyk dok. eng - angličtina Země vyd. RU - Rusko Klíč. slova pulsed laser deposition ; thin films ; non-stoichiometric silicon oxide ; laser ablation in background gas Vědní obor RIV BH - Optika, masery a lasery Obor OECD Optics (including laser optics and quantum optics) Způsob publikování Omezený přístup Institucionální podpora FZU-D - RVO:68378271 UT WOS 000729362600008 EID SCOPUS 85121119763 DOI 10.1134/S0869864321040089 Anotace The nanosecond laser ablation technique was used to synthesize thin silicon oxide films of various stoichiometry in vacuum and in a background gas. The local oxidation degree of specimens was evaluated using three different characterization methods. It was found that, on increasing the distance to the laser-plume axis, there occurred a monotonic increase in the oxygen content of the films due to their oxidation inhomogeneity. A profound decrease in ablated mass, related to an increased reverse flow of substance to the target, was found to occur when the pressure of the ambient mixture was increased from 20 to 60 Pa. A comparison was made of the oxidation efficiencies of the films heated at the stage of their synthesis and at the stage of annealing of already formed films. It is shown that the composition of the films could be controlled by varying the inert-gas pressure at the constant pressure of the chemically active component in ambient mixture.
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Počet záznamů: 1