Acceleration of the yellow band luminescence in GaN layers via Si and Ge doping

VANĚK, T., JARÝ, V., HUBÁČEK, T., HÁJEK, F., KULDOVÁ, K., GEDEONOVÁ, Z., BABIN, V., REMEŠ, Z., BURYI, M. Acceleration of the yellow band luminescence in GaN layers via Si and Ge doping. Journal of Alloys and Compounds. 2022, 914(Sep), 165255. ISSN 0925-8388. E-ISSN 1873-4669. Dostupné z: doi: 10.1016/j.jallcom.2022.165255.