Počet záznamů: 1
Detachment of epitaxial graphene from SiC substrate by XUV laser radiation
- 1.
SYSNO ASEP 0541068 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Detachment of epitaxial graphene from SiC substrate by XUV laser radiation Tvůrce(i) Vozda, V. (CZ)
Medvedev, Nikita (UFP-V) ORCID
Chalupský, J. (CZ)
Čechal, J. (CZ)
Burian, Tomáš (UFP-V) ORCID
Hájková, V. (CZ)
Juha, Libor (UFP-V) ORCID
Krůs, Miroslav (UFP-V) RID
Kunc, J. (CZ)Celkový počet autorů 9 Zdroj.dok. Carbon. - : Elsevier - ISSN 0008-6223
Roč. 161, May (2020), s. 36-43Poč.str. 8 s. Jazyk dok. eng - angličtina Země vyd. US - Spojené státy americké Klíč. slova radiation ; XUV laser ; epitaxial graphene Vědní obor RIV BH - Optika, masery a lasery Obor OECD Optics (including laser optics and quantum optics) CEP LTT17015 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy LM2015083 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy Způsob publikování Omezený přístup Institucionální podpora UFP-V - RVO:61389021 UT WOS 000523561700005 EID SCOPUS 85078188334 DOI 10.1016/j.carbon.2020.01.028 Anotace The thermal decomposition on silicon carbide (SiC) is one of the most used growth techniques for fabrication of epitaxial graphene. However, it significantly diminishes graphene's otherwise exceptional carrier mobility. Reduction of the substrate influence is therefore essential for keeping conductivity at high levels. Here we present a novel technique where a sample with epitaxial graphene grown on SiC was exposed to intense 21.2 nm radiation. A sub-nanosecond pulse at low fluence in an interval 0.4–0.7 J/cm2 was used to break covalent sp3 bonds between the SiC substrate and buffer (the first graphene layer) which remains, except for release of its intrinsic strain, almost unaffected. A detailed analysis of the irradiated area examined by several microscopic and spectroscopic methods such as white-light interferometry and micro-Raman spectroscopy shows a clear evidence of a graphene layer detached from the substrate. Higher fluences induce damage to SiC substrate which expands due to the amorphization process. Damage thresholds were obtained by an advanced method of ablative imprints and compared with those calculated by the hybrid code XTANT. Pracoviště Ústav fyziky plazmatu Kontakt Vladimíra Kebza, kebza@ipp.cas.cz, Tel.: 266 052 975 Rok sběru 2021 Elektronická adresa https://www.sciencedirect.com/science/article/abs/pii/S0008622320300282?via%3Dihub
Počet záznamů: 1