Radiation resistance of nanolayered silicon nitride capacitors

0533408 - FZÚ 2021 RIV NL eng J - Článek v odborném periodiku
Romanova, M. - Avotina, L. - Andrulevicius, M. - Dekhtyar, Y. - Enichek, G. - Kizane, G. - Novotný, Michal - Pajuste, E. - Pokorný, Petr - Yager, T. - Zaslavski, A.
Radiation resistance of nanolayered silicon nitride capacitors.
Nuclear Instruments & Methods in Physics Research Section B. Roč. 471, May (2020), s. 17-23. ISSN 0168-583X. E-ISSN 1872-9584
Grant ostatní: AV ČR(CZ) LZA-16-01
Program: Bilaterální spolupráce
Institucionální podpora: RVO:68378271
Klíčová slova: silicon nitride * capacitor * capacitance * breakdown voltage * gamma radiation * nanocapacitor
Obor OECD: Coating and films
Impakt faktor: 1.377, rok: 2020
Způsob publikování: Omezený přístup
https://doi.org/10.1016/j.nimb.2020.03.010

Single-layered and multi-layered 20–60 nm thick silicon nitride (Si3N4) dielectric nanofilms were fabricated using a low-pressure chemical vapour deposition (LPCVD) method. The X-ray photoelectron spectroscopy (XPS) confirmed less oxygen content in the multi-layered nanofilms. The capacitors with Si3N4 multilayer demonstrated a tendency to a higher breakdown voltage compared to the capacitors with Si3N4 single layer. Si3N4 nanofilms and capacitors with Si3N4 dielectric were exposed to 1 kGy dose of gamma photons. Fourier transform infrared (FTIR) spectroscopy analysis showed that no modifications of the chemical bonds of Si3N4 were present after irradiation. Also, gamma irradiation did not influence the breakdown voltage of the capacitors but decreased their capacitance measured at 1 MHz frequency.
Trvalý link: http://hdl.handle.net/11104/0311797