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Gamma radiation effects on hydrogen-terminated nanocrystalline diamond bio-transistors
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SYSNO ASEP 0459021 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Gamma radiation effects on hydrogen-terminated nanocrystalline diamond bio-transistors Tvůrce(i) Krátká, Marie (FZU-D) RID, ORCID
Babchenko, Oleg (FZU-D) RID, ORCID
Ukraintsev, Egor (FZU-D) RID, ORCID
Vachelová, Jana (UJF-V) RID, SAI
Davídková, Marie (UJF-V) RID, ORCID, SAI
Vandrovcová, Marta (FGU-C) RID, ORCID
Kromka, Alexander (FZU-D) RID, ORCID, SAI
Rezek, Bohuslav (FZU-D) RID, ORCIDZdroj.dok. Diamond and Related Materials. - : Elsevier - ISSN 0925-9635
Roč. 63, Mar (2016), 186-191Poč.str. 6 s. Jazyk dok. eng - angličtina Země vyd. CH - Švýcarsko Klíč. slova diamond thin films ; field effect transistors ; proteins ; cells ; gamma irradiation ; atomic force microscope ; biosensors Vědní obor RIV BO - Biofyzika CEP GBP108/12/G108 GA ČR - Grantová agentura ČR Institucionální podpora FZU-D - RVO:68378271 ; UJF-V - RVO:61389005 ; FGU-C - RVO:67985823 UT WOS 000371942700034 EID SCOPUS 84959204564 DOI 10.1016/j.diamond.2015.10.015 Anotace Diamond is considered as a promising tissue equivalent material in radiation therapies as well as for bioelectronic sensors due to its unique set of properties. These features are combined in this work where effects of gamma irradiation on function and stability of microscopic hydrogen-terminated diamond solution-gated field effect transistors are studied. The H-diamond SG-FETs were prepared using 300 nm thin diamond films deposited on glass by microwave plasma. Prior to gamma irradiation they were interfaced to proteins and cells in cell growth medium. Blank H-diamond SG-FETs did not degrade after the irradiation. With adsorbed proteins and cells they showed specific changes in gate current characteristics after the irradiation. These changes are attributed to modified protein layer and cell morphology on the diamond surface. The presented results establish a first step towards real-time electronicmonitoring of cell growth during the irradiation by therapeutically relevant doses. Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2017
Počet záznamů: 1