Effect of neutron irradiation on indium-containing III-V semiconductor micromonocrystals

0422912 - ÚFP 2014 RIV CH eng C - Konferenční příspěvek (zahraniční konf.)
Bolshakova, I. - Ďuran, Ivan - Kost, Y. - Kovaljova, N. - Kovařík, Karel - Makido, O. - Sentkerestiová, J. - Shtabaliuk, A. - Shurygin, F. - Viererbl, L.
Effect of neutron irradiation on indium-containing III-V semiconductor micromonocrystals.
MATERIALS AND APPLICATIONS FOR SENSORS AND TRANSDUCERS II Book Series: Key Engineering Materials. STAFA-ZURICH: TRANS TECH PUBLICATIONS LTD, 2013, s. 273-276. ISBN 978-3-03785-616-1. ISSN 1013-9826.
[International Conference on Materials and Applications for Sensors and Transducers, IC-MAST/2./. Budapest (HU), 24.05.2012-28.05.2012]
Institucionální podpora: RVO:61389021
Klíčová slova: plasma * tokamak * neutrons * micromonocrystals
Kód oboru RIV: BL - Fyzika plazmatu a výboje v plynech

The paper presents the results of the studies into the effect exerted by neutron irradiation on the parameters of microcrystals of III-V group semiconductor materials (InSb, InAs and their solid solutions). The values of optimum initial charge carrier concentration for each of the materials under research, which would allow them to retain maximum radiation resistance, have been determined. The obtained results can be employed in assessing the industrial semiconductor sensors' operability in radiation environment.
Trvalý link: http://hdl.handle.net/11104/0229033