Atomic surface structure of MOVPE-prepared GaP(1 1 1)B

0533932 - FZÚ 2021 RIV NL eng J - Článek v odborném periodiku
Kleinschmidt, P. - Mutombo, Pingo - Berthold, T. - Paszuk, A. - Steidl, M. - Ecke, G. - Nägelein, A. - Koppka, C. - Supplie, O. - Krischok, S. - Romanyuk, Olexandr - Himmerlich, M. - Hannappel, T.
Atomic surface structure of MOVPE-prepared GaP(1 1 1)B.
Applied Surface Science. Roč. 534, Dec (2020), s. 1-8, č. článku 147346. ISSN 0169-4332. E-ISSN 1873-5584
Grant CEP: GA ČR GC18-06970J
Institucionální podpora: RVO:68378271
Klíčová slova: MOVPE-preparation * STM * XPS * DFT
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 6.707, rok: 2020
Způsob publikování: Omezený přístup
https://doi.org/10.1016/j.apsusc.2020.147346

Controlling the surface formation of the group-V face of (1 1 1)-oriented III-V semiconductors is crucial for subsequent successful growth of III-V nanowires for electronic and optoelectronic applications. With a view to preparing GaP/Si(1 1 1) virtual substrates, we investigate the atomic structure of the MOVPE (metalorganic vapor phase epitaxy)-prepared GaP(1 1 1)B surface (phosphorus face). We find that upon high-temperature annealing in the H2-based MOVPE process ambience, the surface is phosphorus-depleted with a partially H-terminated phosphorus surface. Atomic force microscopy (AFM) reveals that a high proportion of the surface is covered by Ga-rich islands. We conclude that the STM images of the samples after high-temperature annealing only reflect the flat regions of the partially H-terminated phosphorus face, whereas an increasing coverage with Ga-rich islands, as detected by AFM and AES, forms upon annealing and underlies the higher proportion of Ga in the XPS measurements.
Trvalý link: http://hdl.handle.net/11104/0312161