Počet záznamů: 1
Damage formation and Er structural incorporation in m-plane and a-plane ZnO
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SYSNO ASEP 0520868 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Damage formation and Er structural incorporation in m-plane and a-plane ZnO Tvůrce(i) Macková, Anna (UJF-V) RID, ORCID, SAI
Malinský, Petr (UJF-V) RID, ORCID, SAI
Jagerová, Adéla (UJF-V) ORCID, SAI
Mikšová, Romana (UJF-V) RID, ORCID, SAI
Nekvindová, P. (CZ)
Cajzl, J. (CZ)
Rinkeviciute, E. (CZ)
Akhmadaliev, S. (DE)Celkový počet autorů 8 Zdroj.dok. Nuclear Instruments & Methods in Physics Research Section B. - : Elsevier - ISSN 0168-583X
Roč. 460, č. 12 (2019), s. 38-46Poč.str. 9 s. Forma vydání Tištěná - P Akce 28th International Conference on Atomic Collisions in Solids (ICACS) / 10th International Symposium on Swift Heavy Ions in Matter (SHIM) Datum konání 01.07.2018 - 07.07.2018 Místo konání Caen Země FR - Francie Typ akce WRD Jazyk dok. eng - angličtina Země vyd. NL - Nizozemsko Klíč. slova a-Plane and m-Plane ZnO doped ; damage accumulation asymmetry ; Er ion implantation in ZnO Vědní obor RIV BG - Jaderná, atomová a mol. fyzika, urychlovače Obor OECD Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect) CEP EF16_013/0001812 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy LM2015056 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy GA18-03346S GA ČR - Grantová agentura ČR Způsob publikování Omezený přístup Institucionální podpora UJF-V - RVO:61389005 UT WOS 000504510900008 EID SCOPUS 85054841489 DOI 10.1016/j.nimb.2018.10.003 Anotace The various crystallographic orientations in semiconductors as ZnO exhibit different resistivity under the ion beam irradiation/implantation. Study of the various crystallographic orientations is mandatory for nanostructured semiconductor system development. This paper reports on the implantation damage build-up, structural modification and Er dopant position in a-plane and m-plane ZnO implanted with Er+ 400 keV ions at the ion fluences 5 x 10(14), 2.5 x 10(15), 5 x 10(15) cm(-2) and subsequently annealed at 600 degrees C in O-2 atmosphere using Rutherford Back-Scattering spectrometry (RBS) in channelling mode as well as using Raman spectroscopy. Strongly suppressed surface damage formation was observed in both crystallographic orientations compared to the deep damage growth with the increased ion implantation fluence. More progressive damage accumulation appeared in m-plane ZnO compared to a-plane ZnO. Simultaneously, the strong Er out-diffusion depth profile in m-plane ZnO accompanied by the damage accumulation at the surface was observed after the annealing. Contrary, the surface recovery accompanied by Er concentration depth profiles keeping a normal distribution with a small maximum shift to the surface was observed in a-plane ZnO. Different structure recovery and Er behaviour was evidenced in a-plane and m-plane ZnO by RBS-C, moreover Raman spectroscopy proved a lower damage at higher ion fluences introduced in a-plane ZnO compared to m-plane. The structure modifications were discussed in connection with a damage accumulation and Er concentration depth profile shape in various ZnO crystallographic orientations in as-implanted and as-annealed samples. Pracoviště Ústav jaderné fyziky Kontakt Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Rok sběru 2020 Elektronická adresa https://doi.org/10.1016/j.nimb.2018.10.003
Počet záznamů: 1