Počet záznamů: 1
Preparation of CIGS thin films by HiPIMS or DC sputtering and various selenization processes
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SYSNO ASEP 0397887 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Preparation of CIGS thin films by HiPIMS or DC sputtering and various selenization processes Tvůrce(i) Olejníček, Jiří (FZU-D) RID, ORCID
Hubička, Zdeněk (FZU-D) RID, ORCID, SAI
Kšírová, Petra (FZU-D) RID, ORCID
Kment, Štěpán (FZU-D) RID, ORCID
Brunclíková, Michaela (FZU-D) RID
Kohout, Michal (FZU-D) RID, ORCID
Čada, Martin (FZU-D) RID, ORCID, SAI
Darveau, S.A. (US)
Exstrom, C.L. (US)Zdroj.dok. Journal of Advanced Oxidation Technologies - ISSN 1203-8407
Roč. 16, č. 2 (2013), s. 314-319Poč.str. 6 s. Jazyk dok. eng - angličtina Země vyd. CA - Kanada Klíč. slova CIGS ; HIPIMS ; selenization ; nanocrystals ; solar energy ; sputtering ; thin films Vědní obor RIV BL - Fyzika plazmatu a výboje v plynech CEP LH12045 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy Institucionální podpora FZU-D - RVO:68378271 UT WOS 000322719200014 EID SCOPUS 84881502019 Anotace CuIn1-xGaxSe2 (CIGS) thin films were prepared by the sputtering of metallic precursors Cu, In, Ga in HiPIMS or DC magnetron and subsequently selenized in an atmosphere of pure Se or Ar+Se. The average absorbed power and discharge current were the same in the HiPIMS and DC plasma. The basic aim of this work was to compare the structural properties of the CIGS films as a function of magnetron excitation mode and selenization thermal treatment conditions. Film characteristics were measured using X-ray diffraction, scanning electron microscopy, Raman spectroscopy, energy-dispersive X-ray spectroscopy and other techniques. All the CIGS films revealed the chalcopyrite crystal structure with a preferential (112) orientation. Only a very small influence of magnetron excitation mode on thin film properties was observed. On the other hand, selenization in Ar+Se atmosphere led to bigger grain size, better crystallinity and a significantly higher level of Ga substitution. Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2014
Počet záznamů: 1