Influence of capping layer on the properties of MOVPE-grown InAs/GaAs quantum dots

HOSPODKOVÁ, Alice, PANGRÁC, Jiří, OSWALD, Jiří, HULICIUS, Eduard, KULDOVÁ, Karla, VYSKOČIL, Jan, MELICHAR, Karel, ŠIMEČEK, Tomislav. Influence of capping layer on the properties of MOVPE-grown InAs/GaAs quantum dots. Journal of Crystal Growth. 2008, 310(23), 5081-5084. ISSN 0022-0248. E-ISSN 1873-5002. Dostupné z: doi: 10.1016/j.jcrysgro.2008.07.011