Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms

0542805 - FZÚ 2022 RIV NL eng J - Článek v odborném periodiku
Vaněk, Tomáš - Hájek, František - Dominec, Filip - Hubáček, Tomáš - Kuldová, Karla - Pangrác, Jiří - Košutová, Tereza - Kejzlar, P. - Bábor, P. - Lachowski, A. - Hospodková, Alice
Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms.
Journal of Crystal Growth. Roč. 565, July (2021), č. článku 126151. ISSN 0022-0248. E-ISSN 1873-5002
Grant CEP: GA MŠMT(CZ) EF16_019/0000760; GA MŠMT LM2018110; GA TA ČR(CZ) FW03010298
Grant ostatní: OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institucionální podpora: RVO:68378271
Klíčová slova: characterization * growth models * MOVPE * nitrides * scintillators
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 1.830, rok: 2021
Způsob publikování: Open access s časovým embargem

Nitride heterostructures with an extremely high number of InGaN/GaN multiple quantum wells were grown and studied by multiple techniques. Large redshift (282 meV) in photoluminescence spectra was observed with an increasing number of quantum wells in the structure from 10 to 60. From the comparison of structures grown on sapphire and GaN substrates, the phenomenon of giant redshift is explained. A theory based on the surface migration of the adsorbed atoms from the semi-polar V-pit facets to the c-plane facets is suggested and proven by several experimental techniques including STEM, SIMS, SEM, white light interferometry, and spectrally and spatially resolved cathodoluminescence. Finally, a change in the surface morphology caused by the growing size of the V-pits and the transformation of the c-plane surface areas is discussed.

Trvalý link: http://hdl.handle.net/11104/0320191