Cu-Si nanoobjects prepared by CVD on Cu/Cu.sub.5./sub.Si-substrates using various precursors (SiH.sub.4./sub., EtSiH.sub.3./sub., BuSiH.sub.3./sub.) with added H.sub.2./sub. or air

Klementová, Mariana - Krabáč, Lubomír - Brázda, Petr - Palatinus, Lukáš - Dřínek, Vladislav
Cu-Si nanoobjects prepared by CVD on Cu/Cu₅Si-substrates using various precursors (SiH₄, EtSiH₃, BuSiH₃) with added H₂ or air.
Journal of Crystal Growth. Roč. 465, May (2017), s. 6-11. ISSN 0022-0248. E-ISSN 1873-5002
Obor OECD: Inorganic and nuclear chemistry
Impakt faktor: 1.742, rok: 2017
http://hdl.handle.net/11104/0275555