Cu-Si nanoobjects prepared by CVD on Cu/Cu.sub.5./sub.Si-substrates using various precursors (SiH.sub.4./sub., EtSiH.sub.3./sub., BuSiH.sub.3./sub.) with added H.sub.2./sub. or air

KLEMENTOVÁ, Mariana, KRABÁČ, Lubomír, BRÁZDA, Petr, PALATINUS, Lukáš, DŘÍNEK, Vladislav. Cu-Si nanoobjects prepared by CVD on Cu/Cu₅Si-substrates using various precursors (SiH₄, EtSiH₃, BuSiH₃) with added H₂ or air. Journal of Crystal Growth. 2017, 465(May), 6-11. ISSN 0022-0248. E-ISSN 1873-5002. Dostupné z: doi: 10.1016/j.jcrysgro.2017.02.019