Cerium and europium doped ZnO thin films fabricated by pulsed laser deposition

0432017 - FZÚ 2015 eng A - Abstrakt
Novotný, Michal - Fitl, P. - Bulíř, Jiří - Marešová, E. - Hruška, P. - Guille, A. - Guy, S. - Drahokoupil, Jan - Fekete, Ladislav - Lančok, Ján
Cerium and europium doped ZnO thin films fabricated by pulsed laser deposition.
E-MRS 2014 SPRING MEETING. Lille: European Materials Research Society, 2014 - (Lippert, T.). J-24-J-24
[E-MRS 2014 Spring Meeting. 26.05.2014-30.05.2014, Lille]
Grant CEP: GA MŠMT(CZ) LM2011029; GA ČR(CZ) GAP108/11/0958; GA MŠMT(CZ) 7AMB14FR010
Grant ostatní: AVČR(CZ) M100101271
Institucionální podpora: RVO:68378271
Klíčová slova: cerium * europium * ZnO * thin film * pulsed laser deposition
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

Wurtzite ZnO possesses a wide band gap of 3.37 eV and a large exciton binding energy of 60 meV at room temperature. ZnO has been extensively studied because of its potential applications in various fields, such as gas sensor, solar cells, photodetectors, light emitting diodes and laser systems. Rare earth doped ZnO has attracted much attention as a luminescent material for both fundamental research and applications. Cerium and europium doped ZnO thin films were grown by Pulsed Laser Deposition (Nd:YAG, λ= 266 nm, τ = 6 ns) from Ce2O3:ZnO (1% Ce) and Eu2O3:ZnO targets, respectively, in oxygen or nitrogen ambient. ZnO films were deposited on fused silica and Si (100) substrates at substrate temperature of 300°C and at room temperature. Optical properties were analyzed by optical spectroscopy, spectrophotometric measurement and spectral ellipsometry. Structural properties were characterized by XRD.
Trvalý link: http://hdl.handle.net/11104/0236513