Počet záznamů: 1
EPD of Reverse Micelle Pd and Pt Nanoparticles onto InP and GaN for High-Response Hydrogen Sensors
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SYSNO ASEP 0396586 Druh ASEP C - Konferenční příspěvek (mezinárodní konf.) Zařazení RIV D - Článek ve sborníku Název EPD of Reverse Micelle Pd and Pt Nanoparticles onto InP and GaN for High-Response Hydrogen Sensors Tvůrce(i) Žďánský, Karel (URE-Y)
Yatskiv, Roman (URE-Y) RID, ORCID
Černohorský, Ondřej (URE-Y)
Piksová, K. (CZ)Celkový počet autorů 4 Zdroj.dok. ELECTROPHORETIC DEPOSITION: FUNDAMENTALS AND APPLICATIONS IV, Key Engineering Materials, 507. - ZURICH : TRANS TECH PUBLICATIONS LTD, 2012 / Boccaccini A.R. ; VanDeBiest O. ; Clasen R. ; Dickerson J.H. - ISSN 1013-9826 - ISBN 9783037853795 Rozsah stran s. 169-173 Poč.str. 5 s. Forma vydání Tištěná - P Akce 4th International Conference on Electrophoretic Deposition: Fundamentals and Applications Datum konání 02.10.2011-07.10.2011 Místo konání Puerto Vallarta Země MX - Mexiko Typ akce WRD Jazyk dok. eng - angličtina Země vyd. CH - Švýcarsko Klíč. slova Electrophoresis ; Metal Nanoparticles ; Schottky Barrier Vědní obor RIV JA - Elektronika a optoelektronika, elektrotechnika Institucionální podpora URE-Y - RVO:67985882 UT WOS 000308567500027 DOI 10.4028/www.scientific.net/KEM.507.169 Anotace We investigated properties of nanolayers electrophoretically deposited (EPD) onto semiconductor indium phosphide (InP) or gallium nitride (GaN) single crystals from colloid solutions of metal palladium (Pd), platinum (Pt) or bimetallic Pd/Pt nanoparticles (NPs) in isooctane. Colloids with metal NPs were prepared by reaction of metal compounds with the reducing agent hydrazine in water confined to reverse micelles of surfactant AOT.. Chopped DC electric voltage was applied for the time period to deposit metal NPs, only partly covering surface of the wafer. The deposits were image-observed by scanning electron microscopy (SEM)..Diodes with porous Schottky contacts were made by printing colloidal graphite on the NPs deposited surface and making ohmic contact on the blank side of the wafer. The diodes showed current-voltage characteristics of excellent rectification ratio and barrier height values close to Schottky-Mott limit, which was an evidence of negligible Fermi level pinning. Large increase of current was observed after switching on a flow of gas blend hydrogen in nitrogen (H-2/N-2). The diodes were measured with various H-2/N-2 in the range from 1000 ppm to 1 ppm of H-2. Current change ratios about 10(6) and about 10 were achieved with 1000 ppm and 1 ppm H-2/N-2. Pracoviště Ústav fotoniky a elektroniky Kontakt Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488 Rok sběru 2014
Počet záznamů: 1