X-ray topographic investigation of the deformation field around spots irradiated by FLASH single pulses

0372183 - FZÚ 2012 RIV GB eng J - Článek v odborném periodiku
Wierzchowski, W. - Wieteska, K. - Balcer, T. - Klinger, D. - Sobierajski, R. - Zymierska, D. - Chalupský, Jaromír - Hájková, Věra - Burian, Tomáš - Gleeson, A.J. - Juha, Libor - Tiedtke, K. - Toleikis, S. - Vyšín, Luděk - Wabnitz, H. - Gaudin, J.
X-ray topographic investigation of the deformation field around spots irradiated by FLASH single pulses.
Radiation Physics and Chemistry. Roč. 80, č. 10 (2011), s. 1036-1040. ISSN 0969-806X. E-ISSN 1879-0895
Grant CEP: GA AV ČR KAN300100702; GA MŠMT LC510; GA ČR(CZ) GAP108/11/1312; GA MŠMT(CZ) LC528; GA MŠMT LA08024; GA AV ČR IAAX00100903; GA MŠMT(CZ) ME10046
Výzkumný záměr: CEZ:AV0Z10100523
Klíčová slova: silicon * FLASH irradiation * x-ray topography * deformation fields
Kód oboru RIV: BH - Optika, masery a lasery
Impakt faktor: 1.227, rok: 2011

An important problem in the experiments performed with the intense fourth generation X-ray sources is the damages of the examined samples caused by the high energy impact. The effect introduced by the beam from the FLASH source in crystalline silicon samples was studied through synchrotron white beam projection and section topography, enabling the evaluation of the strain field associated with the damages. The topographs indicated the existence of deformed field of cylindrical symmetry providing the dark contrast. It was also shown that some of the Bragg-case section images of spots in silicon correspond well to the simulated images of rod-like inclusions.
Trvalý link: http://hdl.handle.net/11104/0205557