Počet záznamů: 1
Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates
- 1.LEE, L.Y., FRENTRUP, M., VACEK, P., MASSABUAU, F. C. P., KAPPERS, M. J., WALLIS, D. J., OLIVER, R. A. Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates. Journal of Crystal Growth. 2019, 524(OCT), 125167. ISSN 0022-0248. E-ISSN 1873-5002. Dostupné z: doi: 10.1016/j.jcrysgro.2019.125167.
Počet záznamů: 1