Počet záznamů: 1
Structural damage and ion-channelling effects in a single-crystal Si layer modified by medium-heavy ions
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SYSNO ASEP 0496726 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Structural damage and ion-channelling effects in a single-crystal Si layer modified by medium-heavy ions Tvůrce(i) Mikšová, Romana (UJF-V) RID, ORCID, SAI
Macková, Anna (UJF-V) RID, ORCID, SAI
Jagerová, Adéla (UJF-V) ORCID, SAI
Yatskiv, Roman (URE-Y) RID, ORCIDCelkový počet autorů 4 Zdroj.dok. Surface and Interface Analysis. - : Wiley - ISSN 0142-2421
Roč. 50, č. 11 (2018), s. 1243-1249Poč.str. 7 s. Forma vydání Tištěná - P Akce 17th European Conference on Applications of Surface and Interface Analysis (ECASIA 2017) Datum konání 24.09.2017 - 29.09.2017 Místo konání Monpellier Země FR - Francie Typ akce EUR Jazyk dok. eng - angličtina Země vyd. US - Spojené státy americké Klíč. slova ion irradiation of crystals ; MC modelling of ion channeling ; RBS channeling ; SOI material Vědní obor RIV BG - Jaderná, atomová a mol. fyzika, urychlovače Obor OECD Nuclear physics Vědní obor RIV – spolupráce Ústav fotoniky a elektroniky - Elektronika a optoelektronika, elektrotechnika CEP GA15-01602S GA ČR - Grantová agentura ČR EF16_013/0001812 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy LM2015056 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy Institucionální podpora UJF-V - RVO:61389005 ; URE-Y - RVO:67985882 UT WOS 000448889600049 EID SCOPUS 85050581054 DOI 10.1002/sia.6492 Anotace Structural modification after medium-heavy ion irradiation was characterised by Rutherford backscattering spectrometry in the channelling mode (RBS-C) for silicon-on-insulator (SOI) material. Silicon on insulator was irradiated using C+, 2(+), N+, 2(+), and O+, 2(+) ions at fluences of 1 x 10(14) and 1 x 10(15) cm(-2) and energies of 0.4, 3, and 5 MeV to follow the interplay of electronic and nuclear stopping and its influence on damage accumulation. The relative amount of displaced atoms in the surface-irradiated layer was extracted from RBS-C spectra and used, along with axial channel analysis, to study ion-channelling effects in the modified crystalline lattice. The discussion of ion penetration through the modified crystalline layer of the SOI structure in channelling direction was supported by a Monte Carlo simulation (FLUX code) of He ion flux maps in a gradually modified Si crystalline upper layer taking into account the experimentally determined relative disorder extracted from RBS-C.
The RBS-C measurement shows an increase of the relative amount of displaced atoms mainly after irradiation using 0.4-MeV ions at an ion fluence of 1 x 10(15) cm(-2). The narrowing effect of channels for He ion-beam channelling experiment was observed in the irradiated silicon layers and discussed in connection with the irradiation parameters. The FLUX simulation, provided with the experimentally given value of the displaced atoms, has confirmed that it is not only the vacancies that can cause such a narrowing effect of the angular scan. The angular scan narrowing can be explained for predominately electronic stopping by induced crystalline-cell modification.Pracoviště Ústav jaderné fyziky Kontakt Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Rok sběru 2019
Počet záznamů: 1