0431501 - FZÚ 2015 RIV NL eng J - Článek v odborném periodiku
Melikhova, O. - Čížek, J. - Lukáč, F. - Vlček, M. - Novotný, Michal - Bulíř, Jiří - Lančok, Ján - Anwand, W. - Brauer, G. - Connolly, J. - McCarthy, E. - Krishnamurthy, S. - Mosnier, J.-P.
Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition.
Journal of Alloys and Compounds. Roč. 580, suppl. 1 (2013), S40-S43. ISSN 0925-8388. E-ISSN 1873-4669
Grant CEP: GA ČR(CZ) GAP108/11/0958
Institucionální podpora: RVO:68378271
Klíčová slova: defects * hydrogen * positron annihilation * thin films * ZnO
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 2.726, rok: 2013 ; AIS: 0.534, rok: 2013
DOI: https://doi.org/10.1016/j.jallcom.2013.01.121

ZnO films with thickness of ~80 nm were grown by pulsed laser deposition (PLD) on MgO (1 0 0) single crystal and amorphous fused silica (FS) substrates. Structural studies of ZnO films and a high quality reference ZnO single crystal were performed by slow positron implantation spectroscopy (SPIS). It was found that ZnO films exhibit significantly higher density of defects than the reference ZnO crystal. Moreover, the ZnO film deposited on MgO substrate exhibits higher concentration of defects than the film deposited on amorphous FS substrate most probably due to a dense network of misfit dislocations. The ZnO films and the reference ZnO crystal were subsequently loaded with hydrogen by electrochemical cathodic charging. SPIS characterizations revealed that absorbed hydrogen introduces new defects into ZnO.
Trvalý link: http://hdl.handle.net/11104/0236109