Spin pumping in nanolayers of WS.sub.2./sub./Co.sub.2./sub.FeAl heterostructures: Large spin mixing conductance and spin transparency

Hait, S.; Gupta, N.K.; Sharma, N.; Pandey, L.; Kumar, N.; Barwal, V.; Kumar, Prabhat; Chaudhary, S.

doi:https://dx.doi.org/10.1063/5.0107655

Počet záznamů: 1

Spin pumping in nanolayers of WS.sub.2./sub./Co.sub.2./sub.FeAl heterostructures: Large spin mixing conductance and spin transparency

1.

SYSNO ASEP	0567150
Druh ASEP	J - Článek v odborném periodiku
Zařazení RIV	J - Článek v odborném periodiku
Poddruh J	Článek ve WOS
Název	Spin pumping in nanolayers of WS₂/Co₂FeAl heterostructures: Large spin mixing conductance and spin transparency
Tvůrce(i)	Hait, S. (IN) Gupta, N.K. (IN) Sharma, N. (JP) Pandey, L. (JP) Kumar, N. (JP) Barwal, V. (JP) Kumar, Prabhat (FZU-D)_ORCID Chaudhary, S. (IN)
Celkový počet autorů	8
Číslo článku	133901
Zdroj.dok.	Journal of Applied Physics. - : AIP Publishing - ISSN 0021-8979 Roč. 132, č. 13 (2022)
Poč.str.	10 s.
Jazyk dok.	eng - angličtina
Země vyd.	US - Spojené státy americké
Klíč. slova	spin pumping ; heterostructures ; large spin mixing conductance ; spin transparency
Vědní obor RIV	BM - Fyzika pevných látek a magnetismus
Obor OECD	Condensed matter physics (including formerly solid state physics, supercond.)
Způsob publikování	Omezený přístup
Institucionální podpora	FZU-D - RVO:68378271
UT WOS	000888258100016
EID SCOPUS	85139877971
DOI	10.1063/5.0107655
Anotace	Materials with high spin–orbit coupling (SOC) are a prerequisite for the realization of spin–orbit torque-based magnetic memories. Transition metal dichalcogenides (TMDs) are an apt choice for such applications due to their high SOC strength. In this work, we have investigated the spin pumping phenomenon at the interface between thin tungsten disulphide (WS2) films and Co2FeAl (CFA) Heusler alloy films by performing ferromagnetic resonance (FMR) measurements on WS2/CFA heterostructures capped with the 4 nm thin Al film. While Raman spectroscopy conclusively proves the number of monolayers in the WS2 films, atomic force microscopy and x-ray reflectivity measurements were used to quantify the smoothness of the grown interfaces (<0.4 nm) as well as the individual layer thicknesses in the heterostructure stacks. High-quality TMDs can be used as efficient materials for magnetic memory device applications.
Pracoviště	Fyzikální ústav
Kontakt	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Rok sběru	2023
Elektronická adresa	https://doi.org/10.1063/5.0107655

Počet záznamů: 1