Počet záznamů: 1
Nanostructures for achieving selective properties of a thermophotovoltaic emitter
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SYSNO ASEP 0549311 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Nanostructures for achieving selective properties of a thermophotovoltaic emitter Tvůrce(i) Šimonová, L. (CZ)
Matějka, Milan (UPT-D) RID, ORCID, SAI
Knápek, Alexandr (UPT-D) RID, ORCID, SAI
Králík, Tomáš (UPT-D) RID, ORCID, SAI
Pokorná, Zuzana (UPT-D) RID, ORCID, SAI
Mika, Filip (UPT-D) RID, SAI, ORCID
Fořt, Tomáš (UPT-D) RID, ORCID, SAI
Man, O. (CZ)
Škarvada, P. (CZ)
Otáhal, A. (CZ)
Čudek, P. (CZ)Celkový počet autorů 11 Číslo článku 2443 Zdroj.dok. Nanomaterials. - : MDPI
Roč. 11, č. 9 (2021)Poč.str. 14 s. Forma vydání Online - E Jazyk dok. eng - angličtina Země vyd. CH - Švýcarsko Klíč. slova thermophotovoltaics ; selective emitters ; nanostructures ; reactive ion etching ; emissivity ; electron beam lithography Vědní obor RIV BM - Fyzika pevných látek a magnetismus Obor OECD Condensed matter physics (including formerly solid state physics, supercond.) Způsob publikování Open access Institucionální podpora UPT-D - RVO:68081731 UT WOS 000701403500001 EID SCOPUS 85115082183 DOI 10.3390/nano11092443 Anotace This paper focuses on the research and development of a suitable method for creating a selective emitter for the visible and near-infrared region to be able to work optimally together with silicon photovoltaic cells in a thermophotovoltaic system. The aim was to develop a new method to create very fine structures beyond the conventional standard (nanostructures), which will increase the emissivity of the base material for it to match the needs of a selective emitter for the VIS and NIR region. Available methods were used to create the nanostructures, from which we eliminated all unsuitable methods, for the selected method, we established the optimal procedure and parameters for their creation. The development of the emitter nanostructures included the necessary substrate pretreatments, where great emphasis was placed on material purity and surface roughness. Tungsten was purposely chosen as the main material for the formation of the nanostructures, we verified the effect of the formed structure on the resulting emissivity. This work presents a new method for the formation of nanostructures, which are not commonly formed in such fineness, by this, it opens the way to new possibilities for achieving the desired selectivity of the thermophotovoltaic emitter. Pracoviště Ústav přístrojové techniky Kontakt Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178 Rok sběru 2022 Elektronická adresa https://www.mdpi.com/2079-4991/11/9/2443
Počet záznamů: 1