Počet záznamů: 1
Simple and Efficient AlN-Based Piezoelectric Energy Harvesters
- 1.
SYSNO ASEP 0525645 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Simple and Efficient AlN-Based Piezoelectric Energy Harvesters Tvůrce(i) Gablech, I. (CZ)
Klempa, J. (CZ)
Pekárek, J. (CZ)
Vyroubal, P. (CZ)
Hrabina, Jan (UPT-D) RID, ORCID, SAI
Holá, Miroslava (UPT-D) RID, ORCID, SAI
Kunz, J. (CZ)
Brodsky, J. (CZ)
Neužil, P. (CZ)Celkový počet autorů 9 Číslo článku 143 Zdroj.dok. Micromachines. - : MDPI
Roč. 11, č. 2 (2020)Poč.str. 10 s. Forma vydání Tištěná - P Jazyk dok. eng - angličtina Země vyd. CH - Švýcarsko Klíč. slova AlN ; micro-electro-mechanical systems (MEMS) cantilever ; complementary metal oxide semiconductor (CMOS) compatible ; energy harvesting ; high performance Vědní obor RIV BH - Optika, masery a lasery Obor OECD Optics (including laser optics and quantum optics) Způsob publikování Open access Institucionální podpora UPT-D - RVO:68081731 UT WOS 000520181500032 EID SCOPUS 85081204415 DOI 10.3390/mi11020143 Anotace In this work, we demonstrate the simple fabrication process of AlN-based piezoelectric energy harvesters (PEH), which are made of cantilevers consisting of a multilayer ion beam-assisted deposition. The preferentially (001) orientated AlN thin films possess exceptionally high piezoelectric coefficients d(33) of (7.33 +/- 0.08) pC.N-1. The fabrication of PEH was completed using just three lithography steps, conventional silicon substrate with full control of the cantilever thickness, in addition to the thickness of the proof mass. As the AlN deposition was conducted at a temperature of approximate to 330 degrees C, the process can be implemented into standard complementary metal oxide semiconductor (CMOS) technology, as well as the CMOS wafer post-processing. The PEH cantilever deflection and efficiency were characterized using both laser interferometry, and a vibration shaker, respectively. This technology could become a core feature for future CMOS-based energy harvesters. Pracoviště Ústav přístrojové techniky Kontakt Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178 Rok sběru 2021 Elektronická adresa https://www.mdpi.com/2072-666X/11/2/143
Počet záznamů: 1