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Formation of spin-polarized current in antiferromagnetic polymer spintronic field-effect transistors
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SYSNO ASEP 0563406 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Formation of spin-polarized current in antiferromagnetic polymer spintronic field-effect transistors Tvůrce(i) Sun, S.-J. (CN)
Menšík, Miroslav (UMCH-V) RID
Ganzorig, C. (MN)
Toman, Petr (UMCH-V) RID, ORCID
Pfleger, Jiří (UMCH-V) RIDZdroj.dok. Physical Chemistry Chemical Physics. - : Royal Society of Chemistry - ISSN 1463-9076
Roč. 24, č. 42 (2022), s. 25999-26010Poč.str. 12 s. Jazyk dok. eng - angličtina Země vyd. GB - Velká Británie Klíč. slova spintronics ; conducting polymers ; FET Vědní obor RIV CD - Makromolekulární chemie Obor OECD Polymer science CEP LTAUSA19066 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy Způsob publikování Omezený přístup Institucionální podpora UMCH-V - RVO:61389013 UT WOS 000870311300001 EID SCOPUS 85141580210 DOI 10.1039/D2CP03119A Anotace We have theoretically investigated the feasibility of constructing a spintronic field-effect transistor with the active channel made of a polymer chain with the antiferromagnetic coupling oriented in the source-to-drain direction. We found two different device function regimes controlling the on-chain spin–charge carrier density by tuning the gate voltage. At higher charge carrier densities, the source–drain current linearly increases with decreasing charge carrier densities. In this regime, no polymer spin-polarized current is observed. Upon reaching a critical gate voltage, the current decreases with decreasing charge densities. It is accompanied by the formation of spin-polarized current, generated by an on-chain process, which can be related to spin–charge spatial distribution symmetry breaking caused either by an application of the source-to-drain voltage (higher spin polarization near the drain), or the breakdown of the Peierls dimerization near chain ends. Numerical simulation of the transistor characteristics suggests that the design of a polymer spintronic field-effect transistor is in principle feasible.
Pracoviště Ústav makromolekulární chemie Kontakt Eva Čechová, cechova@imc.cas.cz ; Tel.: 296 809 358 Rok sběru 2023 Elektronická adresa https://pubs.rsc.org/en/content/articlelanding/2022/CP/D2CP03119A
Počet záznamů: 1