Počet záznamů: 1
Atomic layer deposited films of Al2O3 on fluorine-doped tin oxide electrodes: stability and barrier properties
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SYSNO ASEP 0539267 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Atomic layer deposited films of Al2O3 on fluorine-doped tin oxide electrodes: stability and barrier properties Tvůrce(i) Krýsová, Hana (UFCH-W) RID, ORCID
Neumann-Spallart, M. (CZ)
Tarábková, Hana (UFCH-W) RID, ORCID
Janda, Pavel (UFCH-W) RID, ORCID
Kavan, Ladislav (UFCH-W) RID, ORCID
Krýsa, J. (CZ)Zdroj.dok. Beilstein Journal of Nanotechnology. - : Beilstein - Institut zur Foerderung der Chemischen Wissenschaften - ISSN 2190-4286
Roč. 12, JAN 2021 (2021), s. 24-34Poč.str. 11 s. Jazyk dok. eng - angličtina Země vyd. DE - Německo Klíč. slova Al2O3 ; atomic layer deposition ; corrosion Vědní obor RIV CG - Elektrochemie Obor OECD Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis) CEP GA20-11635S GA ČR - Grantová agentura ČR LM2018124 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy Způsob publikování Open access Institucionální podpora UFCH-W - RVO:61388955 UT WOS 000618558200001 EID SCOPUS 85099882753 DOI 10.3762/bjnano.12.2 Anotace Al2O3 layers were deposited onto electrodes by atomic layer deposition. Solubility and electron-transport blocking were tested. Films deposited onto fluorine-doped tin oxide (FTO, F:SnO2/glass) substrates blocked electron transfer to redox couples (ferricyanide/ferrocyanide) in aqueous media. However, these films were rapidly dissolved in 1 M NaOH (≈100 nm/h). The dissolution was slower in 1 M H2SO4 (1 nm/h) but after 24 h the blocking behaviour was entirely lost. The optimal stability was reached at pH 7.2 where no changes were found up to 24 h and even after 168 h of exposure the changes in the blocking behaviour were still minimal. This behaviour was also observed for protection against direct reduction of FTO. Pracoviště Ústav fyzikální chemie J.Heyrovského Kontakt Michaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196 Rok sběru 2022 Elektronická adresa http://hdl.handle.net/11104/0316945
Počet záznamů: 1