Electrical properties of nanoscale p-n heterojunctions formed between a single ZnO nanorod and GaN substrate

0538001 - ÚFE 2021 RIV NL eng J - Článek v odborném periodiku
Tiagulskyi, Stanislav - Yatskiv, Roman - Faitová, Hana - Kučerová, Šárka - Vaniš, Jan - Grym, Jan
Electrical properties of nanoscale p-n heterojunctions formed between a single ZnO nanorod and GaN substrate.
Materials Science in Semiconductor Processing. Roč. 107, 1 March (2020), č. článku 104808. ISSN 1369-8001. E-ISSN 1873-4081
Grant CEP: GA ČR(CZ) GA17-00546S; GA ČR(CZ) GA17-00355S
Institucionální podpora: RVO:67985882
Klíčová slova: Current-voltage characteristics * Focused ion beam patterning * Nanoscale heterojunctions * ZnO nanorods
Obor OECD: Electrical and electronic engineering
Impakt faktor: 3.927, rok: 2020
Způsob publikování: Omezený přístup
https://doi.org/10.1016/j.mssp.2019.104808

We study electronic transport in single vertically oriented n-type ZnO nanorods on p-type GaN substrates using a nanoprobe in a scanning electron microscope. The ZnO nanorods are prepared by chemical bath deposition on both plain GaN substrates and the substrates locally modified by focused ion beam. The heterojunctions on focused ion beam-modified substrates show rectifying current-voltage characteristics, while the characteristics of the plain structures are symmetrical. Adsorption/desorption processes on the surface of ZnO nanorods strongly affect their electrical properties. We demonstrate that the electronic transport in the nanorods grown on focused ion beam-modified substrates is less sensitive to adsorption/desorption processes, which is related to their uniform nucleation and higher crystalline quality
Trvalý link: http://hdl.handle.net/11104/0315834