Počet záznamů: 1
MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm
- 1.Zíková, M., Hospodková, A., Pangrác, J., Oswald, J., Krčil, P., Hulicius, E., Komninou, P., Kioseoglou, J. MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm. In: KAPON, E., RUDRA, A., eds. International Conference on Metalorganic Vapor Phase Epitaxy /17./. Lausanne: École Polytechnique Fédérale de Lausanne, 2014, s. 14-14.
Počet záznamů: 1