MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm

ZÍKOVÁ, M., HOSPODKOVÁ, A., PANGRÁC, J., OSWALD, J., KRČIL, P., HULICIUS, E., KOMNINOU, P., KIOSEOGLOU, J. MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm. In: KAPON, E., RUDRA, A., eds. International Conference on Metalorganic Vapor Phase Epitaxy /17./. Lausanne: École Polytechnique Fédérale de Lausanne, 2014, s. 14-14.