Počet záznamů: 1
MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm
- 1.ZÍKOVÁ, Markéta, HOSPODKOVÁ, Alice, PANGRÁC, Jiří, OSWALD, Jiří, KRČIL, Pavel, HULICIUS, Eduard, KOMNINOU, Ph., KIOSEOGLOU, J. MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm. In: KAPON, E., RUDRA, A., eds. International Conference on Metalorganic Vapor Phase Epitaxy /17./. Lausanne: École Polytechnique Fédérale de Lausanne, 2014, s. 14-14.
Počet záznamů: 1