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PEC reliability in 3D e-beam DOE nanopatterning
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SYSNO ASEP 0431332 Druh ASEP A - Abstrakt Zařazení RIV Záznam nebyl označen do RIV Zařazení RIV Není vybrán druh dokumentu Název PEC reliability in 3D e-beam DOE nanopatterning Tvůrce(i) Kolařík, Vladimír (UPT-D) RID, ORCID, SAI
Krátký, Stanislav (UPT-D) RID, ORCID, SAI
Urbánek, Michal (UPT-D) RIDCelkový počet autorů 3 Zdroj.dok. 9th International Conference on Charged Particle Optics. Book of Abstracts. - Brno : Institute of Scientific Instruments AS CR, v. v. i, 2014 - ISBN 978-80-87441-11-4
S. 37Poč.str. 1 s. Forma vydání Tištěná - P Akce International Conference on Charged Parrticle Optics /9./ Datum konání 31.08.2014-05.09.2014 Místo konání Brno Země CZ - Česká republika Typ akce WRD Jazyk dok. eng - angličtina Země vyd. CZ - Česká republika Klíč. slova proximity effect correction ; diffractive optical elements Vědní obor RIV JA - Elektronika a optoelektronika, elektrotechnika CEP LO1212 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy TE01020233 GA TA ČR - Technologická agentura ČR Institucionální podpora UPT-D - RVO:68081731 Anotace Diffractive optical elements (DOE) such as computer generated holograms (CGH) and blazed gratings are commonly used in coherent optics (beam splitters, beam shapers, diffusers)and security features. High quality preparation of these structures is necessary to obtain designed properties. Electron beam lithography (EBL) is one of method which allows creating fine structures in high resolution. The most undesired influence during the preparation of structures by EBL is proximity effect causing the adjacent regions to exposed one will receive non-zero dose. This effect is described by point spread function (PSF) which represents the absorbed energy distribution in radial distance from the point of incidence after point exposure. These PSF are usually obtained by Monte Carlo simulation in different programs (using various MC models). If the PSF function is known it can be used for proximity effect correction (PEC). Approximation of PSF can be done and then the key parameters (α, β, η) can be used for PEC also. There are several models for 3D PEC calculating and their authors claims their reliability is quite high. However, our contribution shows that the situation about 3D PEC for relief DOE is not so clear. This contribution deals with various correction approaches on multilevel structures (8 levels CGH, 8-levels blazed gratings with period of 2, 5 and 10 um) prepared by Gaussian e-beam writer with accelerating voltage of 100 kV. The correction of backscattered electrons energy contribution plays crucial role in this case. All structures were prepared in PMMA resist with thickness of 2 um. Various software (Sceleton and Tracer) is used to obtain PSF and two PSF representations are applied (numerical PSF and Gaussian approximation – α, β, η parameters). It gives us four possibilities to calculate PEC. The Simulation of designed DOE shape with using of corrected doses and resist contrast curve shows different results for each approach. Pracoviště Ústav přístrojové techniky Kontakt Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178 Rok sběru 2015
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