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Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment
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SYSNO ASEP 0375018 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment Tvůrce(i) Descoeudres, A. (CH)
Barraud, L. (CH)
De Wolf, S. (CH)
Strahm, B. (CH)
Lachenal, D. (CH)
Guérin, C. (CH)
Holman, Z.C. (CH)
Zicarelli, F. (CH)
Demaurex, B. (CH)
Seif, J. (CH)
Holovský, Jakub (FZU-D) RID, ORCID
Ballif, C. (CH)Zdroj.dok. Applied Physics Letters. - : AIP Publishing - ISSN 0003-6951
Roč. 99, č. 12 (2011), 123506/1-123506/3Poč.str. 3 s. Jazyk dok. eng - angličtina Země vyd. US - Spojené státy americké Klíč. slova hererojunction ; solar cells ; hydrogen plasma Vědní obor RIV BM - Fyzika pevných látek a magnetismus CEZ AV0Z10100521 - FZU-D (2005-2011) UT WOS 000295853500075 DOI 10.1063/1.3641899 Anotace Silicon heterojunction solar cells have high open-circuit voltages thanks to excellent passivation of the wafer surfaces by thin intrinsic amorphous silicon (a-Si:H) layers deposited by plasma-enhanced chemical vapor deposition. We show a dramatic improvement in passivation when H2 plasma treatments are used during film deposition. Although the bulk of the a-Si:H layers is slightly more disordered after H2 treatment, the hydrogenation of the wafer/film interface is nevertheless improved with as-deposited layers. Employing H2 treatments, 4 cm2 heterojunction solar cells were produced with industry-compatible processes, yielding open-circuit voltages up to 725 mV and aperture area efficiencies up to 21%. Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2012
Počet záznamů: 1