Počet záznamů: 1
Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment
- 1.Descoeudres, A., Barraud, L., De Wolf, S., Strahm, B., Lachenal, D., Guérin, C., Holman, Z.C., Zicarelli, F., Demaurex, B., Seif, J., Holovský, J., Ballif, C. Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment. Applied Physics Letters. 2011, 99(12), 123506/1-123506/3. ISSN 0003-6951. E-ISSN 1077-3118. Dostupné z: doi: 10.1063/1.3641899.
Počet záznamů: 1