Počet záznamů: 1
Deformation mechanisms of Al thin films: In-situ TEM and molecular dynamics study
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SYSNO ASEP 0557624 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Deformation mechanisms of Al thin films: In-situ TEM and molecular dynamics study Tvůrce(i) Bajtošová, L. (CZ)
Křivská, B. (CZ)
Králík, R. (CZ)
Veselý, J. (CZ)
Hanuš, J. (CZ)
Harcuba, P. (CZ)
Fikar, Jan (UFM-A) RID, ORCID
Yadav, Ankit (UFM-A)
Cieslar, M. (CZ)Celkový počet autorů 9 Číslo článku 114688 Zdroj.dok. Scripta Materialia. - : Elsevier - ISSN 1359-6462
Roč. 215, JUL (2022)Poč.str. 6 s. Jazyk dok. eng - angličtina Země vyd. GB - Velká Británie Klíč. slova simulations ; plasticity ; migration ; crystals ; strength ; behavior ; stress ; ni ; cu ; Nanocrystalline materials ; Thin films ; In-situ transmission electron microscopy ; Molecular dynamics Vědní obor RIV JJ - Ostatní materiály Obor OECD Nano-materials (production and properties) Způsob publikování Omezený přístup Institucionální podpora UFM-A - RVO:68081723 UT WOS 000791282900001 EID SCOPUS 85127039949 DOI 10.1016/j.scriptamat.2022.114688 Anotace Molecular dynamics (MD) is a simulation method regularly used for examining the mechanical properties of materials on an atomic level. Despite many reasonable results obtained by this method, it remains unclear how well an MD simulation can reproduce the results of a specific experiment. Thin aluminum-based films were deformed in-situ in a transmission electron microscope (TEM). Grain boundary processes were identified as the primary deformation mechanism, and grain rotations during deformation were confirmed by automatic orientation maps. Tensile deformation of Al-based thin films with columnar grains corresponding to the material structure observed in the experiment was then simulated using MD. Several main attributes of the simulation were found to match the experimental results. The effect of grain orientation on intragranular dislocation activity was observed by TEM and confirmed by MD simulations. Pracoviště Ústav fyziky materiálu Kontakt Yvonna Šrámková, sramkova@ipm.cz, Tel.: 532 290 485 Rok sběru 2023 Elektronická adresa https://www.sciencedirect.com/science/article/pii/S1359646222001889?via%3Dihub
Počet záznamů: 1