Počet záznamů: 1
Role of heat accumulation in the multi-shot damage of silicon irradiated with femtosecond XUV pulses at a 1 MHz repetition rate
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SYSNO ASEP 0466618 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Role of heat accumulation in the multi-shot damage of silicon irradiated with femtosecond XUV pulses at a 1 MHz repetition rate Tvůrce(i) Sobierajski, R. (PL)
Jacyna, I. (PL)
Dlužewski, P. (PL)
Klepka, M.T. (PL)
Klinger, D. (PL)
Pelka, J. B. (PL)
Burian, Tomáš (FZU-D) RID, ORCID
Hájková, Věra (FZU-D) RID, ORCID
Juha, Libor (FZU-D) RID, ORCID, SAI
Saksl, K. (SK)
Vozda, Vojtěch (FZU-D) ORCID
Makhotkin, I. (NL)
Louis, E. (NL)
Faatz, B. (DE)
Tiedtke, K. (DE)
Toleikis, S. (DE)
Enkisch, H. (DE)
Hermann, M. (DE)
Strobel, S. (DE)
Loch, R.A. (DE)
Chalupský, Jaromír (FZU-D) RID, ORCIDCelkový počet autorů 21 Zdroj.dok. Optics Express. - : Optical Society of America - ISSN 1094-4087
Roč. 24, č. 14 (2016), s. 15468-15477Poč.str. 10 s. Jazyk dok. eng - angličtina Země vyd. US - Spojené státy americké Klíč. slova free-electron lasers ; damage ; x-rays ; soft x-rays ; extreme ultraviolet (EUV) ; semiconductor materials ; materials processing Vědní obor RIV BL - Fyzika plazmatu a výboje v plynech CEP LH14072 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy GA14-29772S GA ČR - Grantová agentura ČR Institucionální podpora FZU-D - RVO:68378271 UT WOS 000381770500043 EID SCOPUS 84979655978 DOI 10.1364/OE.24.015468 Anotace The role played by heat accumulation in multi-shot damage of silicon was studied. Bulk silicon samples were exposed to intense XUV monochromatic radiation of a 13.5 nm wavelength in a series of 400 femtosecond pulses, repeated with a 1 MHz rate (pulse trains) at the FLASH facility in Hamburg. The observed surface morphological and structural modifications are formed as a result of sample surface melting. Modifications are threshold dependent on the mean fluence of the incident pulse train, with all threshold values in the range of approximately 36-40 mJ/cm(2). Experimental data is supported by a theoretical model described by the heat diffusion equation. The threshold for reaching the melting temperature (45 mJ/cm(2)) and liquid state (54 mJ/cm(2)), estimated from this model, is in accordance with experimental values within measurement error. The model indicates a significant role of heat accumulation in surface modification processes. Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2017
Počet záznamů: 1