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Static and dynamic VHF-deposition of microcrystalline silicon at 140 MHz with rates up to 2.5 nm/s
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SYSNO ASEP 0440680 Druh ASEP C - Konferenční příspěvek (mezinárodní konf.) Zařazení RIV D - Článek ve sborníku Název Static and dynamic VHF-deposition of microcrystalline silicon at 140 MHz with rates up to 2.5 nm/s Tvůrce(i) Strobel, C. (DE)
Leszczynska, B. (DE)
Leszczynski, S. (DE)
Merkel, U. (DE)
Kuske, J. (DE)
Fischer, D.D. (DE)
Albert, M. (DE)
Holovský, Jakub (FZU-D) RID, ORCID
Bartha, J.W. (DE)Zdroj.dok. Proceedings of the 29th European Photovoltaic Energy Conference and Exhibition. - Berlin : WIP, 2014 - ISBN 3-936338-34-5 Rozsah stran s. 1917-1920 Poč.str. 4 s. Forma vydání Online - E Akce European Photovoltaic Energy Conference and Exhibition /29./ Datum konání 22.09.2014-26.09.2014 Místo konání Amsterdam Země NL - Nizozemsko Typ akce WRD Jazyk dok. eng - angličtina Země vyd. DE - Německo Klíč. slova PECVD ; microcrystalline silicon ; solar cell ; high rate ; very high frequency Vědní obor RIV BM - Fyzika pevných látek a magnetismus Institucionální podpora FZU-D - RVO:68378271 Anotace Microcrystalline silicon thin-film solar cells were deposited by VHF-PECVD at 140 MHz with absorber layer deposition rates up to 2.5 nm/s by a combination of very high plasma excitation frequencies (140 MHz) and high power high pressure deposition. The homogeneity of the deposition is ensured by the linear plasma source concept combined with a dynamic deposition process (moving substrates). High efficiencies of 9.3 % (9.6 % with AR coating) have been achieved at a deposition rate of 0.8 nm/s. At higher deposition rates (2.5 nm/s) the efficiency drops to 8.3 % (8.6 % with AR coating) although the absorber layer defect density is equal to the low rate material as was measured by PDS/FTPS. On the other hand the high rate material exhibits a pronounced crack formation in the absorber layer as was observed in SEM cross section images. This study investigates in how far the effect of cracks can be mitigated by different approaches, e.g. using µc-SiOx doped layers. Pracoviště Fyzikální ústav Kontakt Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Rok sběru 2016
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