Internal fields in nanostructured silicon thin films for photovoltaics

0356890 - FZÚ 2011 JP eng C - Konferenční příspěvek (zahraniční konf.)
Fejfar, Antonín - Vetushka, Aliaksi - Ledinský, Martin - Červenka, Jiří - Stuchlík, Jiří - Kalusová, V. - Lukšík, M. - Kočka, Jan
Internal fields in nanostructured silicon thin films for photovoltaics.
Proceedings of the 3rd International Symposium on Innovative Solar Cells. Tokyo: Tokyo Institute of Technology, 2010, s. 63-70. ISBN N.
[International Symposium on Innovative Solar Cells /3./. Tokyo (JP), 07.10.2010-08.10.2010]
Grant CEP: GA MŠMT(CZ) LC06040; GA AV ČR KAN400100701; GA MŠMT LC510
GRANT EU: European Commission(XE) 240826 - PolySiMode
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: nanocrystalline * silicon * thin films * photovoltaics
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus

Individual grains in Si thin films grown at the boundary between amorphous and microcrystalline growth have sizes from 10s to 100s nm. Difference in conductivity of the grain and surrounding amorphous phase leads to concentration of internal electric field and thus also the current density and other fields (e.g. heat generation density due to the ohmic losses or internal strain). This has consequences for local electronic measurements using the scanning probe microscopy, which we develop in our laboratory, but also to the processes taking part in the solar cells. Variations of local fields are commonly not taken into account for discussion of photovoltaic solar energy conversion, in spite of the fact that the structures have dimensions comparable to the photon wavelengths.
Trvalý link: http://hdl.handle.net/11104/0195295