Počet záznamů: 1
Electrical properties of highly nitrogen-doped 6H-SiC single crystals: Microwave cavity perturbation study
- 1.Savchenko, Dariia - Yatsyk, D.M. - Genkin, O.M. - Nosachov, Yu.F. - Drozdenko, O.V. - Moiseenko, V.I. - Kalabukhova, E.N.
Electrical properties of highly nitrogen-doped 6H-SiC single crystals: Microwave cavity perturbation study.
Semiconductor Physics Quantum Electronics & Optoelectronics. Roč. 26, č. 1 (2023), s. 30-35. ISSN 1560-8034. E-ISSN 1605-6582
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 0.9, rok: 2022
Způsob publikování: Open access
https://hdl.handle.net/11104/0348145
Počet záznamů: 1