Electrical properties of highly nitrogen-doped 6H-SiC single crystals: Microwave cavity perturbation study

Savchenko, D., Yatsyk, D.M., Genkin, O.M., Nosachov, Y.F., Drozdenko, O.V., Moiseenko, V.I., Kalabukhova, E.N. Electrical properties of highly nitrogen-doped 6H-SiC single crystals: Microwave cavity perturbation study. Semiconductor Physics Quantum Electronics & Optoelectronics. 2023, 26(1), 30-35. ISSN 1560-8034. E-ISSN 1605-6582. Dostupné z: doi: 10.15407/spqeo26.01.030.