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Electrical properties of highly nitrogen-doped 6H-SiC single crystals: Microwave cavity perturbation study
- 1.SAVCHENKO, Dariia, YATSYK, D.M., GENKIN, O.M., NOSACHOV, Yu.F., DROZDENKO, O.V., MOISEENKO, V.I., KALABUKHOVA, E.N. Electrical properties of highly nitrogen-doped 6H-SiC single crystals: Microwave cavity perturbation study. Semiconductor Physics Quantum Electronics & Optoelectronics. 2023, 26(1), 30-35. ISSN 1560-8034. E-ISSN 1605-6582. Dostupné z: doi: 10.15407/spqeo26.01.030.
Počet záznamů: 1