Počet záznamů: 1
Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide
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SYSNO ASEP 0557036 Druh ASEP J - Článek v odborném periodiku Zařazení RIV J - Článek v odborném periodiku Poddruh J Článek ve WOS Název Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide Tvůrce(i) Kjeldby, S. B. (NO)
Azarov, A. (NO)
Nguyen, P. D. (NO)
Venkatachalapathy, V. (RU)
Mikšová, Romana (UJF-V) RID, ORCID, SAI
Macková, Anna (UJF-V) RID, ORCID, SAI
Kuznetsov, A. (NO)
Prytz, O. (NO)
Vines, L. (NO)Celkový počet autorů 9 Číslo článku 125701 Zdroj.dok. Journal of Applied Physics. - : AIP Publishing - ISSN 0021-8979
Roč. 131, č. 12 (2022)Poč.str. 10 s. Forma vydání Tištěná - P Jazyk dok. eng - angličtina Země vyd. US - Spojené státy americké Klíč. slova Electron energy loss spectroscopy ; High resolution transmission electron microscopy ; Rutherford backscattering spectroscopy Obor OECD Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect) CEP EF16_013/0001812 GA MŠMT - Ministerstvo školství, mládeže a tělovýchovy Výzkumná infrastruktura CANAM II - 90056 - Ústav jaderné fyziky AV ČR, v. v. i. Způsob publikování Omezený přístup Institucionální podpora UJF-V - RVO:61389005 UT WOS 000779491400010 EID SCOPUS 85127357239 DOI 10.1063/5.0083858 Anotace Defect accumulation and annealing phenomena in Si-implanted monoclinic gallium oxide (beta-Ga2O3) wafers, having ((2) over bar 01), (010), and (001) orientations, were studied by Rutherford backscattering spectrometry in channeling mode (RBS/c), x-ray diffraction (XRD), and (scanning) transmission electron microscopy [(S)TEM]. Initially, the samples with different surface orientations were implanted with 300 keV Si-28(+)-ions, applying fluences in the range of 1 x 10(14)-2 x 10(16) Si/cm(2), unveiling interesting disorder accumulation kinetics. In particular, the RBS/c, XRD, and (S)TEM combined data suggested that the radiation disorder buildup in Si-implanted beta-Ga2O3 is accompanied by significant strain accumulation, assisting crystalline-to-crystalline phase transitions instead of amorphization. Selected samples having ((2) over bar 01 ) orientation were subjected to isochronal (30 min) anneals in the range of 300-1300 degrees C in air. Systematic RBS/c and XRD characterization of these samples suggested complex structural transformations, which occurred as a function of the fluence and the temperature. Moreover, a detailed (S)TEM analysis of the sample implanted with 2 x 10(16) Si/cm(2) and annealed at 1100 degrees C was enhanced by applying dispersive x-ray and electron energy-loss spectroscopies. The analysis revealed silicon agglomerations in the form of silicon dioxide particles. Signal from silicon was also detected outside of the agglomerates, likely occurring as substitutional Si on Ga sites. Pracoviště Ústav jaderné fyziky Kontakt Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Rok sběru 2023 Elektronická adresa https://doi.org/10.1063/5.0083858
Počet záznamů: 1