Germanium and tin nanoparticles encapsulated in amorphous silicon matrix for optoelectronic applications

0540849 - FZÚ 2021 RIV CZ eng A - Abstrakt
Stuchlíková, The-Ha - Remeš, Zdeněk - Stuchlík, Jiří
Germanium and tin nanoparticles encapsulated in amorphous silicon matrix for optoelectronic applications.
Proceedings of Abstracts. Ostrava: Tanger Ltd., 2018 - (Shrbená, J.). s. 91-91. ISBN 978-80-87294-85-7.
[NANOCON 2018 -International Conference on Nanomaterials - Research and Application /10./. 17.10.2018-19.10.2018, Brno]
Grant CEP: GA ČR GC16-10429J
Institucionální podpora: RVO:68378271
Klíčová slova: amorphous silicon * nanoparticles * Ti * Ge
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)

The plasma enhanced chemical vapour deposition (PECVD) was combined with in situ deposition of Ge and Sn thin film by evaporation technique at surface temperature about 220°C to form tin nanoparticles (Ge or Sn NPs) on the surface of hydrogenated silicon thin films. Formation of NPs was additionally stimulated by hydrogen plasma treatment through a low pressure hydrogen glow discharge. Characterization of the prepared structures was performed by scanning electron microscopy (SEM), PIN diode structures with and without the embedded Ge or Sn NPs were characterized of I-V characteristics.
Trvalý link: http://hdl.handle.net/11104/0318439